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| VHB25-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28S is Designed for PACKAGE STYLE .380 4L STUD .112x45 A FEATURES: * * * OmnigoldTM Metalization System B OC D H I J MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC 4.0 A 65 V 35 V 4.0 V 40 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 4.4 OC/W DIM A B C D E F G H I J #8-32 UNC-2A F E G MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10725 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE COB fT PG C TC = 25 C O NONETEST CONDITIONS IC = 200 mA IC = 200 mA IE = 10 mA VE = 28 V VCE = 5.0 V VCB = 28 V VCE = 10 V VCC = 28 V IC = 200 mA POUT = 25 W IC = 200 mA f = 1.0 MHz f = 100 MHz f = 175 MHz MINIMUM TYPICAL MAXIMUM 35 65 4.0 2.0 5 --50 250 8.5 60 UNITS V V V mA --pF MHz dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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